Plasma reactor for the treatment of large size substrates

ABSTRACT

A radiofrequency plasma reactor ( 1 ) for the treatment of substantially large sized substrates is disclosed, comprising between the electrodes ( 3, 5 ) of the plasma reactor a solid or gaseous dielectric layer ( 11 ) having a non planar-shaped surface-profile, said profile being defined for compensating a process non uniformity in the reactor or generating a given distribution profile.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a divisional of application Ser. No. 09/824,936 filed Apr. 3,2001 now abandoned, which is a divisional of application Ser. No.09/401,158 filed Sep. 22, 1999, now U.S. Pat. No. 6,228,438, whichclaims priority of Swiss application number 1466/99 filed Aug. 10, 1999.The disclosures of these applications are hereby incorporated herein byreference in their entireties.

FIELD AND BACKGROUND OF THE INVENTION

The invention relates to a capacitively coupled radiofrequency (RF)plasma reactor and to a process for treating at least one substrate insuch a reactor. Especially, the present invention applies to a largesize capacitive capacitively coupled (RF) plasma reactor.

Often, such a reactor is known as a “capacitive” RF glow dischargereactor, or planar plasma capacitor or parallel plate RF plasma reactor,or as a combination of the above named.

Capacitive RF plasma reactors are typically used for exposing asubstrate to the processing action of a glow discharge. Variousprocesses are used to modify the nature of the substrate surface.Depending on the process and in particular the nature of the gasinjected in the glow discharge, the substrate properties can be modified(adhesion, wetting), a thin film added (chemical vapor deposition CVD,diode sputtering) or another thin film selectively removed (dryetching).

The table shown below gives a simplified summary of the variousprocesses possibly performed in a low pressure capacitive discharge.

Substrate Industry type Process Inlet gas nature Semiconductor Wafer upSurface Cleaning Ar to 30 cm PECVD SiH₄, . . . diameter Dry Etching CF₄,SF₆, Cl₂, . . . Ashing O₂ Disks for Polymeror Diode sputtering Ar +others memory glass up PECVD Organometallics to 30 cm Surface activationO₂, etc. . . . diameter Flat display Glass up Same as for Same as for to1.4 m semiconductors semiconductors diagonal Window pane Glass upCleaning/activation, Air, Argon— web coater to 3 m Nitriding, polymerMonomer, Nitrogen, width, foil, PECVD . . . plastic or metal

The standard frequency of the radiofrequency generators mostly used inthe industry is 13.56 MHz. Such a frequency is allowed for industrialuse by international telecommunication regulations. However, lower andhigher frequencies were discussed from the pioneering days of plasmacapacitor applications. Nowadays, for example for PECVD applications,(plasma enhanced chemical vapor deposition) there is a trend to shiftthe RF frequency to values higher than 13.56 MHz, the favorite valuesbeing 27.12 MHz and 40.68 MHz harmonics of 13.56 MHz).

So, this invention applies to RF frequencies (1 to 100 MHz range), butit is mostly relevant to the case of higher frequencies (above 10 MHz).The invention can even be applied up to the microwave range (severalGHz).

An important problem was noted especially if the RF frequency is higherthan 13.56 MHz and a large size (surface) substrate is used, in such away that the reactor size is no more negligible relative to the freespace wavelength of the RF electromagnetic wave. Then, the plasmaintensity along the reactor can no longer be uniform. Physically, theorigin of such a limitation should lie in the fact that the RF wave isdistributed according to the beginning of a “standing wave” spatialoscillation within the reactor. Other non uniformities can also occur ina reactor, for example non uniformities induced by the reactive gasprovided for the plasma process.

SUMMARY OF THE INVENTION

It is an object of the invention to propose a solution for eliminating,or at least notably reducing, an electromagnetic (or a process) nonuniformity, in a reactor. Thus, according to an important feature of theinvention, an improved capacitively coupled RF plasma reactor shouldcomprise:

-   -   at least two electrically conductive electrodes spaced from each        other, each electrode having an external surface,    -   an internal process space enclosed between the electrodes,    -   gas providing means for providing the internal process space        with a reactive gas,    -   at least one radiofrequency generator connected to at least one        of the electrodes, at a connection location, for generating a        plasma discharge in the process space, and potentially an        additional RF generator for increasing the ion bombardment on        the substrate,    -   means for evacuating the reactive gas from the reactor, so that        said gas circulates within the reactor, at least in the process        space thereof,    -   at least one substrate defining one limit of the internal        process space, to be exposed to the processing action of the        plasma discharge, said at least one substrate extending along a        general surface and being arranged between the electrodes,        characterized in that it further comprises at least one        dielectric “corrective” layer extending outside the internal        process space, as a capacitor electrically in series with said        at least one substrate and the plasma, said at least one        dielectric layer having capacitance per unit surface values        which is not uniform along at least one direction of said        general surface, for compensating a process non uniformity in        the reactor or to generate a given distribution profile.

In other words, the proposed treating process in the reactor of theinvention comprises the steps of:

-   -   locating the at least one substrate between at least two        electrodes, the substrate extending along a general surface,    -   having a reactive gas (or gas mixture) in an internal process        space arranged between the electrodes,    -   having a radiofrequency generator connected to at least one of        the electrodes, at a connection location,    -   having a plasma discharge in at least a zone of the internal        process space facing the substrate, in such a way that said        substrate is exposed to the processing action of the plasma        discharge,    -   creating an extra-capacitor electrically in series with the        substrate and the plasma, said extra-capacitor having a profile,        and    -   defining the profile of the extra-capacitor in such a way that        it has location dependent capacitance per unit surface values        along at least one direction of the general surface of the        substrate.

It is to be noted that such a solution is general. It is valid for allplasma processes, but only for a determined RP frequency.

The “tailored extra-capacitor” corresponding to the above-mentioned said(substantially) “dielectric layer” acts as a component of a capacitivedivider.

Advantageously, the capacitive variations will be obtained through a nonuniform thickness of the layer. Thus, the extra-capacitor will have aprofile having a non planar-shape along a surface.

For compensating a non uniform voltage distribution across the processspace of the reactor, said thickness will preferably be defined in sucha way that:

-   -   the so-called “corrective layer” is the thickest in front of the        location in the process space (where the plasma is generated)        which is the farthest away from the connection location where        the radiofrequency generator is connected to said at least one        electrode, the distance being measured by following the        electrode external surface,    -   and said thickness preferably decreases from said process space        location, as the distance between the process space location and        the connection location on the corresponding electrode        decreases.

Of course, it is to be understood that the above-mentioned “distance” isthe shortest of all possible ways.

So, if the electromagnetic traveling waves induced in the process spacecombine each other near the center of the reactor to form a standingwave having a maximum of voltage in the vicinity of the reactor center,the thickness of the so-called “corrective layer” will be larger in thevicinity of the center thereof, than at its periphery.

One solution in the invention for tailoring said “corrective layer” isto shape at least one surface of the layer in such a way that the layerhas a non planar-shaped external surface, preferably a curved concavesurface facing the internal process space where the plasma is generated.Various ways can be followed for obtaining such a “non planar shaped”surface on the layer.

It is a privileged way in the invention to shape at least one of theelectrodes, in such a way that said electrode has a non planar-shapedsurface facing the substrate, and especially a generally curved concavesurface.

It is another object of the invention to define the composition orconstitution of the so-called “corrective layer”.

According to a preferred solution, said layer comprises at least one ofa solid dielectric layer and gaseous dielectric layer.

If the layer comprises such a gaseous dielectric layer, it willpreferably be in gaseous communication with the internal process spacewhere the plasma is generated.

A substrate comprising a plate having a non planar-shaped externalsurface is also a solution for providing the reactor of the inventionwith the so-called “corrective layer”.

Another object of the invention is to define the arrangement of thesubstrate within the reactor. Therefore, the substrate could comprise(or consist in) a solid member arranged against spacing members locatedbetween said solid member and one of the electrodes, the spacing memberextending in said “corrective layer” along a main direction and having,each, an elongation along said main direction, the elongations being nonuniform along the solid member.

So, the invention suggests that the spacing members preferably comprisea solid end adapted to be arranged against the solid member, said solidend having a space therearound.

Below, the description only refers to a capacitively coupled RF plasmareactor in which the improvements of the invention notably reduce theelectromagnetic non uniformity during the plasma process.

First of all, for most processing plasmas, the electromagneticpropagation brings really a limitation in RF plasma processing forsubstrate sizes of the order, or larger than 0.5 m² and especiallylarger than 1 m², while the frequency of the RF source is higher than 10MHz. More specifically, what is to be considered is the largestdimension of the substrate exposed to the plasma. If the substrate has asubstantially square surface, said “largest dimension” is the diagonalof the square. So, any “largest dimension” higher than substantially 0.7m is critical. Thus, the substrate for the present invention has alargest dimension of at least 0.7 m.

A basic problem, which is solved according to the present invention, isthat, due to the propagative aspect of the electromagnetic wave createdin the plasma capacitor, the RF voltage across the process space is notuniform. If a RF source is centrally connected to an electrode, the RFvoltage decreases slightly from the center to the edges of saidelectrode.

As above-mentioned, one way to recover a (substantially) uniform RFvoltage across the plasma itself, is the following:

-   -   a capacitor is introduced between the electrodes, said capacitor        being in series with the plasma (and the substrate) in the        reactor,    -   this extra-capacitor acts with the plasma capacitor itself as a        voltage divider tailoring the local RF power distribution, to        (substantially) compensate a non uniformity of the process due,        for example, to gas compositional non uniformity, to edge        effects or to temperature gradient.

BRIEF DESCRIPTION OF THE DRAWINGS

Below is a more detailed description of various preferred embodimentsaccording to the invention, in reference to drawings in which:

FIGS. 1 and 2 are two schematic illustrations of an improved reactoraccording to the invention (FIG. 1 is a section of FIG. 2 along linesI-I).

FIGS. 3, 4, 5, 6, 7 and 8 show alternative embodiments of the internalconfiguration of such a reactor.

FIGS. 9, 10, 11, 12 and 13 show further schematic embodiments of typicalprocesses corresponding to the invention.

FIG. 14 illustrates the “tailoring” concept applied to a variation ofthickness.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In FIGS. 1 and 2, the reactor is referenced 1. Reactor 1 encloses twometallic electrodes 3, 5 which have an outer surface, 3 a, 5 a,respectively. The electrodes are spaced from each other.

A gas source 7 provides the reactor with a reactive gas (or a gasmixture) in which the plasma is generated through a radiofrequencydischarge (see the above table). Pumping means 8 are further pumping thegas, at another end of the reactor.

The radiofrequency discharge is generated by a radiofrequency source 9connected at a location 9 a to the upper electrode 3. The location 9 ais centrally arranged on the back of the external surface 3 a of theelectrode.

These schematic illustrations further show an extra-capacitor 11electrically in series with the plasma 13 and a substrate 15 locatedthereon.

The plasma 13 can be observed in the internal space (having the samenumeral reference) which extends between the electrode 3 and thesubstrate 15.

The substrate 15 can be a dielectric plate of a uniform thickness ewhich defines the lower limit of the internal process space 13, so thatthe substrate 15 is exposed to the processing action of the plasmadischarge. The substrate 15 extends along a general surface 15 a and itsthickness e is perpendicular to said surface.

The extra-capacitor 11 interposed between the substrate 15 and the lowerelectrode 5 induces a voltage modification in such a way that the RFvoltage (V_(P)) across the plasma (for example along line 17, betweenthe electrode 3 and the substrate 15), is only a fraction of theradiofrequency voltage (V_(RF)) between the electrodes 3, 5.

It is to be noted that the extra-capacitor 11 is materially defined as adielectric layer (for example a ceramic plate) having a non uniformthickness e₁ along a direction perpendicular to the above-mentionedsurface 15 a.

Since the location of the RF source on the electrode 3 is central, andbecause of the arrangement (as illustrated in FIGS. 1 and 2) of theabove-mentioned elements disposed in the reactor, the thickness e₁ ofthe dielectric plate 11 is maximal at the center thereof andprogressively decreases from said center to its periphery, in such a wayto compensate the electromagnetic non uniformity in the process space13. So, the presence of said relatively thick series capacitor 11reduces the effective voltage across the plasma. Hence, for thecompensation of electromagnetic effects in a large surface reactor asillustrated in FIGS. 1 and 2, the series capacitor 11 has to be a bitthicker in the center of the reactor and must be thinned down toward theperiphery thereof.

The schematic illustrations of FIGS. 3 to 8 show various possibleconfigurations allowing such a compensation of non uniformity in acapacitively coupled radiofrequency plasma reactor, of the typeillustrated in the above FIGS. 1 and 2. It will be noted thatcombinations of the basic options illustrated in FIGS. 3 to 8 arepossible.

In FIG. 3, a flat, planar ceramic plate 21 of a uniform thickness e₂ isattached to the upper electrode 23. There is a tailored spacing 31between the metal electrode 23 and the ceramic plate 21. Above the otherelectrode 25 is arranged a substrate 35 which can be either dielectricor metallic (or electrically conductive on at least one of its surface).

In FIGS. 3 to 8, the location of the connection between the power source(such as the RF source 9 of FIGS. 1 and 2) and the correspondingmetallic electrode is supposed to be centrally arranged on saidelectrode, and the general geometry of the reactor is also supposed tobe as illustrated, so that, in such conditions, the tailored layer 31has a back surface 31 a which is curved with a concave regular profilefacing the process space 13.

Thus, the corresponding upper electrode 23 (the internal limit of which,facing the process space 13, is defined by surface 31 a) has a variablethickness e₃. The dimension e₃ is the thinnest at the center of theelectrode and the thickest at its periphery.

The second opposed electrode 25 is generally parallel to the firstelectrode 23 and has a uniform thickness e₄.

It will be noted that the connection between the solid dielectric plate21 and the tailored gap 31 is not a gas-tight connection. So, thereactive gas introduced within the process space 13 can circulate in thegap 31 which will preferably have a thickness adapted for avoiding aplasma discharge therein. Providing the “corrective gap” 31 withcomplementary means for avoiding said plasma discharge therein is alsopossible.

In FIG. 4, the electrode 23 has the same internal profile 31 a as inFIG. 3.

But, the “corrective layer” is presently a ceramic plate 41 having avariable thickness e₅.

In FIGS. 5 to 8, the substrates 35′ are dielectric substrates.

In FIG. 5, the above electrode 33 is a planar metallic electrode havinga uniform thickness e₄. The lower electrode 45 corresponds to the upperelectrode 23 of FIG. 3. The electrode 45 has an internal upper surface51 b which defines a rear limit for the curved concave gaseous“corrective layer”. Above said layer 51 is arranged a dielectric planarhorizontal plate 21. The ceramic plate 21 of a uniform thickness e₂ isconnected at its periphery to the lower electrode 45 (counterelectrode).The substrate 35′ is arranged on the ceramic plate 21.

Since the pressure of the reactive gas adapted to be introduced withinthe reactive space is typically between 10⁻¹ Pa to 10³ Pa, the pressurewithin the gaseous corrective gap can be substantially equal to saidinjected gas pressure. Typically, the reactive gas pressure within theplasma discharge zone 13 will be comprised between 1 Pa and 30 Pa for anetching process, and will be comprised between 30 Pa and 10³ Pa for aPECVD process. Accordingly, the pressure within the corrective gap (31,51 . . . ) will typically be a low pressure. So, such a gaseousdielectric gap could be called as a “partial vacuum gap”.

In FIG. 6, the substrate 35′ (of a uniform thickness) is laying on asolid dielectric plate (surface 41 a) which can correspond to theceramic plate 41 of FIG. 4 in an inverted position. The front, innersurface 41 a of the plate 41 is flat, while its back surface 41 b isconvex and directly in contact with the lower metallic electrode 45, theinner surface of which is presently concave. So, the plate 41 is a sortof “lens”.

The electrodes 33, 45 illustrated in FIG. 7 correspond to the electrodesof FIG. 5. The substrate 35′, which has a uniform thickness, is planarand parallel to the upper metallic electrode 33. Substrate 35′ is layingon small posts 47 which are erected between the electrode 45 and thesubstrate. The non planar internal upper surface 51 b of the electrode45 gives a non uniform thickness e₆ to the gaseous gap 61 between theelectrode 45 and the substrate 35′. Thus, the space 61 acts as acorrective dielectric layer for compensating the process non uniformityand enables the substrate 35′ to be uniformly treated by the plasmadischarge.

In FIG. 8, the two opposed electrodes 25, 33 have a uniform thickness,are planar and are parallel from each other. The tailored layer 71 isobtained from a non planar substrate 65 arranged on erected posts 57.The elevations of such “spacing elements” 57 are calculated for givingthe substrate 65 the required non planar profile.

The design of FIG. 8 should be mechanically the most attractive, becauseboth electrodes 33, 25 remain flat and the profile of the small gap 71is defined by the inserts 57.

For any purpose it may serve, it will be noted that the radiofrequencypower can be fed either on the electrode on which the substrate isattached, or on the opposite electrode.

In the examples of arrangements illustrated in FIGS. 1 to 8, it willfurther be noted that the tailored layer (11, 31, 41, 51, 61, 71) willpreferably have a thickness calculated as a Gaussian bell-shape for theelectrode to electrode distance (on the basis of the above-mentioned“central” arrangement). Then, said tailored layer itself will be deducedfrom a truncation of the bell-shape, what is left, namely the pedestalof the bell-shape after truncation is the space for the plasma gap(internal process space 13), and the substrate.

FIGS. 9 to 15 show other embodiments of an improved capacitively coupledradiofrequency plasma reactor, according to the invention.

FIG. 9 shows the most straightforward implementation of the invention.The radiofrequency power source 9 is centrally connected to an upperelectrode 3 called “shower head electrode” having holes 83 through itslower surface facing the plasma process space 13, within the innerchamber 81 of the reactor 10. The counter-electrode 30 is defined by themetallic external wall of the chamber 81. The admission of the reactivegas is not illustrated. But the pumping of said reactive gas is madethrough the exhaust duct 85.

It will be noted that all the mechanical (material) elements arrangedwithin the reactor 10 and illustrated in FIG. 9 are kept flat(electrodes and substrate 135, notably). However, the substrate 135(which has a uniform thickness e₇) is curved by laying it on series ofspacing elements 87 erected between the substrate and thecounter-electrode 30. The spacing supports 87 have variable height. Thesubstrate 135 is curved due to its own flexibility. The average distancebetween the supports is defined by the substrate thickness and its Youngmodulus.

In this arrangement, there are two layers in the space between theelectrodes that are not constant (uniform) in thickness: the plasmaprocess space 13 itself and the “corrective space” 89 behind thesubstrate. Although this example is not a straightforward solution, thisconfiguration is effective, because the RF power locally generated inthe plasma depends far more on the little variation of the thin“gaseous” capacitive layer behind the substrate, than the small relativevariation of the thickness e₈ of the plasma process space 13 (along thedirection of elongation of electrode 3).

The “corrective” tailored layer 89 is, in that case, behind thesubstrate. It is a gaseous (or partial vacuum) tailored layer, such awording “vacuum” or “gaseous” being just used to stress the fact thatthis layer has a dielectric constant of 1. The layer can contain gases(the dielectric constant is not affected).

There is a danger that the supports 87, whether they are metallic ordielectric, introduce a local perturbation of the process.

Indeed, just at the support level where the series capacitor of thetailored “corrective” layer 89 is not present, the RF field is locallygoing to be larger. The perturbation, as seen by the plasma, is going tospread over a given distance around the support. This distance scales asthe substrate thickness e₇ plus the “plasma sheath thicknesses”(typically 2-4 mm) referenced as 13 a and 13 b in FIG. 9.

FIG. 9 a shows a potential way to reduce to a bearable level theperturbation due to a support. The solution consists in surrounding eachspacing member 89 by a small recess 91. At the recess level, thecapacitive coupling is reduced. By adjusting the recess to make an exactcompensation, the local perturbation should be practically eliminated.

In relation to the invention, such an arrangement shows that thetailored “corrective” layer proposed in the invention should follow thetailored profile, on the average: very local perturbations on theprofile could be accepted as long as the capacitive coupling, remainssubstantially continuous and properly tailored, when averaged over ascale of a few millimeters.

In the arrangement of FIG. 9, the substrate 135 is a dielectric member.This is important, since any tailored dielectric layer (such as 89) mustabsolutely be within the space defined by the two extremely opposedmetallic layers defining the “process gap”. If a substrate is metallic(electrically conductive), it screens off the effect of any underlyingtailored capacity. Then, the substrate must be considered as one of theelectrode.

In FIG. 10 is illustrated a rather common design in the processindustry. The reactor 20 is fed with two different driving energysources: a RF high frequency source (higher than 30 MHz) and a RF biassource 93 (lower than 15 MHz). The upper “shower head” electrode 3 isconnected to the high frequency source 91 and the low electrode 45 isconnected to the RF bias source 93.

One of the sources is meant to provide the plasma (in that case, weassume that it is an RF driving frequency with a rather high frequency,through source 91). The other source 93 is presently used as an additiveto provide an extra ion bombardment on the substrate 35. Typically, suchan extra input (93) is plugged on the “susceptor” side and is driven at13.56 MHz.

Such a RF bias feature is often used in etching systems to provide thereactive ion etching mode. It has been used in combination with manytypes of plasma (such as microwave, or electron cyclotron resonance).

In the example of FIG. 10, there are two electrodes (3, 45) facing eachother. None of them is actually grounded. However, even in thatparticular configuration, the tailored capacitor of the invention (layer95 of a non uniform thickness) is appropriate. In the case of FIG. 10,the configuration of FIG. 5 is implemented. An important feature is thatthe active part of the reactor 20 (plasma process space 13, substrate35, flat planar dielectric plate 21 of a uniform thickness and tailoredgaseous gap 95 of a non uniform thickness) is between two metallicplates (electrodes 3, 45). The fact that one is grounded or not and thefact that one or several RF frequencies are fed on one and/or the otherelectrode, are irrelevant. The most important fact is that there is anRF voltage difference propagating between the two metallic plates 3, 45.In the example of FIG. 10, two RF frequencies are used. The drawingshows two injections (up and down) for the two RF waves. It isarbitrary. They could be injected from the top together, or from thebottom (upper electrode 3 or lower electrode 45). What is important hereis that there are two different frequencies, one high frequency and onelow frequency. Both propagate in the capacitive reactor.

If, as proposed, a tailored capacitor such as 95 is introduced tocompensate for the high frequency non uniformity, it will make the “lowfrequency” non uniform. The “low” frequency wave amplitude will thenprovide a slightly hollow electric power profile due to the extratailored capacitor in the center. In other words, applying the“tailoring” concept of the invention here makes sense only if the “high”frequency local power uniformity is more important for the process thanthe “low” frequency power uniformity.

In FIG. 11, the tailored capacitive layer 105 is a gaseous space betweena ceramic liner 105 and the metallic electrode 109 which has beenmachined to have the smooth and tailored recess (because of its nonplanar internal surface 109 a) facing the back part of the ceramic plate107. The ceramic liner 107 has many small holes 107 a which transmit thereactive gas provided by the holes 109 b in the backing metal electrode109. The reactive gas is injected through ducts 111 connected to anexternal gas source 113 (the pumping means are not illustrated). The RFsource 115 is connected to the electrode 109, as illustrated.

The design of the backing electrode 109 could have been a traditional“shower head” as electrode 3 in FIG. 10. Another option is the cascadedgas manifold design which is shown in FIG. 11.

In FIG. 12, a microwave capacitive plasma reactor 40 is diagrammaticallyillustrated. The illustration shows a possible design according to whicha rather thick tailored layer generally referenced as 120 (the thicknessof which is designated as e₉) is used to compensate for the drastic nonuniformity due to electromagnetic propagation. The illustrated reactor40 is a reactor for etching a rather small wafer. The microwave comesfrom a coaxial wave guide 121 which expands gradually at 122 (“trumpet”shaped) to avoid reflection. Then, the microwave reaches the processzone 13 where the wave should converge to the center of the reactor(which is cylindrical).

For the dimensions, the substrate 35 arranged on a flatcounter-electrode 126 has a diameter of about 10 cm, and an 1 GHz waveis generated by the microwave generator 123 (30 cm free space wavelength). The central thickness of the tailored layer 120 (if made ofquartz) should be about the same as the space 13 of the free plasmaitself.

It is presently proposed that the tailored layer 120 be obtained fromthree dielectric plates defining three steps (discs 120 a, 120 b, 120c). The discontinuity of the steps should be averaged out by the plasma.The tailored layer is preferably very thick and it would actually makesense to call it “a lens”. The number of disks used to constitute thelens could be four or higher if the ideally smooth shape of the lensmust be reproduced with a better approximation.

In said FIG. 12, it will be noted that the reactive gas is introducedthrough the gas inlet 124, said reactive gas being pumped via a seriesof slits (preferably radially oriented) through the counter-electrode126 and ending into a circular groove 125. The exhaust means forevacuating the reactive gas injected in the reactive space between theelectrodes are not illustrated.

In FIG. 13, the reactor 50 corresponds to the reactor 40 of FIG. 12,except that, in this case, the step variation of the “corrective”dielectric layer 130 is not due to a change of thickness, but to achange of material constituting said layer 130 which has a uniformthickness along its surface. In other words, layer 130 is a variabledielectric constant layer having a uniform thickness e₁₀. The lowdielectric constant layer is the central plate 131 which isconcentrically surrounded by a second plate 132 having a mediumdielectric constant layer. The third external concentric plate 133 hasthe highest dielectric constant.

Hence, the equivalent thickest part of the tailored layer 130 is made ofthe lowest dielectric material (quartz for example), whereas theintermediate layer 132 can be made of a material such as siliconnitride, the highest dielectric constant material at the periphery 133being presently made of aluminum oxide.

The example of FIG. 13 clearly shows that the dielectric layer of theinvention having a capacitance per unit surface values which are notuniform along a general surface generally parallel to the substrate canbe obtained through a variation of the dielectric constant of saidlayer, while the thickness thereof remains uniform along its surface.

From the above description and the illustration of FIG. 14 (based on theembodiment of FIG. 1), it must be clear that, in any case in which thethickness of the “corrective layer”, such as 140, is used to compensatethe process non-uniformity, as observed, the corrective layer(s) will bethe thickest in front of the location in the process space (or on thefacing electrode, such as 3) which is the farthest away from theelectrode connection (9 a). It is to be noted that the “way” (referencedas 150) for calculating said “distance” must follow the external surface(such as 3 a) of the corresponding electrode.

Said thickness will be the lowest at the corresponding location wherethe above “distance” is the smallest, and the non planar profile of thelayer will follow said distance decreasing.

1. A capacitively coupled radiofrequency plasma reactor, comprising: atleast one first electrode having a substrate supporting surface; atleast one second electrode spaced at a distance from the firstelectrode, the second electrode having a concave surface facing thesubstrate supporting surface; an internal process area extending betweenthe first and second electrodes; a gas inlet for providing the processarea with a process gas; at least one radiofrequency generator forfrequencies greater than 13.56 MHz connected to at least one of theelectrodes, at a connection location, for generating a plasma dischargein the process area; a gas outlet for evacuating process gas from thereactor; and a planar dielectric plate of uniform thickness arrangedover the side of the second electrode with the concave surface to definea gaseous dielectric layer, wherein the substrate supporting surface isconfigured to receive at least one substrate with a largest dimension ofat least 0.7 m, defining one boundary of the process area, to be exposedto the processing action of the plasma discharge, and wherein thedielectric plate and the gaseous dielectric layer are arrangedelectrically in series with the substrate and plasma discharge to form adielectric structure having capacitance per unit surface values whichare not uniform along at least one direction of the working surface ofthe substrate, for generating a given distribution profile, forcompensating a process in a non-uniform manner along the workingsurface.
 2. The reactor of claim 1, wherein the gaseous dielectric layerhas a thickness along a direction perpendicular to the working surfaceof the substrate, the thickness being non-uniform along the dielectriclayer, so that the reactor has a location-dependent capacitance per unitsurface values along the working surface.
 3. The reactor of claim 2,wherein the thickness of the gaseous dielectric layer graduallydecreases toward the periphery.
 4. The reactor of claim 1, wherein theat least one radiofrequency generator is centrally connected to at leastone electrode.
 5. The reactor of claim 1, wherein the dielectric plateis formed of a ceramic material and the substrate is made of adielectric or metallic material.